document number: 88387 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 205 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount par ? transient voltage suppressors high temperature stability an d high reliability conditions sm8s10 thru sm8s43a vishay general semiconductor new product features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 175 c capability suitable for high reliability and automotive requirement ? available in uni-directional polarity only ? low leakage current ? low forward voltage drop ? high surge capability ? meets iso7637-2 surge specification (varied by test condition) ? meets msl level 1, per j-std-020, lf maximum peak of 245 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. mechanical data case: do-218ab molding compound meets ul 94 v-0 flammabi lity rating base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test polarity: heatsink is anode note (1) non-repetitive current pulse derated above t a = 25 c primary characteristics v wm 10 v to 43 v p ppm (10 x 1000 s) 6600 w p ppm (10 x 10 000 s) 5200 w p d 8 w i fsm 700 a t j max. 175 c do-218ab maximum ratings (t c = 25 c unless otherwise noted) parameter symbol value unit peak pulse powe r dissipation with 10/1000 s waveform p ppm 6600 w with 10/10 000 s waveform 5200 power dissipation on in finite heatsink at t c = 25 c (fig. 1) p d 8.0 w peak pulse current with 10/1000 s waveform i ppm (1) see next table a peak forward surge current 8. 3 ms single ha lf sine-wave i fsm 700 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88387 206 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sm8s10 thru sm8s43a vishay general semiconductor new product note ? for all types maximum v f = 1.8 v at i f = 100 a measured on 8.3 ms single half sine-wave or eq uivalent square wave, duty cycle = 4 pulses per minute maximum electrical characteristics (t c = 25 c unless otherwise noted) device type breakdown voltage v br (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) maximum reverse leakage at v wm t j = 175 c i d (a) max. peak pulse current at 10/1000 s waveform (a) maximum clamping voltage at i ppm v c (v) min. max. sm8s10 11.1 13.6 5.0 10.0 15 250 351 18.8 sm8s10a 11.1 12.3 5.0 10.0 15 250 388 17.0 sm8s11 12.2 14.9 5.0 11.0 10 150 328 20.1 sm8s11a 12.2 13.5 5.0 11.0 10 150 363 18.2 sm8s12 13.3 16.3 5.0 12.0 10 150 300 22.0 sm8s12a 13.3 14.7 5.0 12.0 10 150 332 19.9 sm8s13 14.4 17.6 5.0 13.0 10 150 277 23.8 sm8s13a 14.4 15.9 5.0 13.0 10 150 307 21.5 sm8s14 15.6 19.1 5.0 14.0 10 150 256 25.8 sm8s14a 15.6 17.2 5.0 14.0 10 150 284 23.2 sm8s15 16.7 20.4 5.0 15.0 10 150 245 26.9 sm8s15a 16.7 18.5 5.0 15.0 10 150 270 24.4 sm8s16 17.8 21.8 5.0 16.0 10 150 229 28.8 sm8s16a 17.8 19.7 5.0 16.0 10 150 254 26.0 sm8s17 18.9 23.1 5.0 17.0 10 150 216 30.5 sm8s17a 18.9 20.9 5.0 17.0 10 150 239 27.6 sm8s18 20.0 24.4 5.0 18.0 10 150 205 32.2 sm8s18a 20.0 22.1 5.0 18.0 10 150 226 29.2 sm8s20 22.2 27.1 5.0 20.0 10 150 184 35.8 sm8s20a 22.2 24.5 5.0 20.0 10 150 204 32.4 sm8s22 24.4 29.8 5.0 22.0 10 150 168 39.4 sm8s22a 24.4 26.9 5.0 22.0 10 150 186 35.5 sm8s24 26.7 32.6 5.0 24.0 10 150 153 43.0 sm8s24a 26.7 29.5 5.0 24.0 10 150 170 38.9 sm8s26 28.9 35.3 5.0 26.0 10 150 142 46.6 sm8s26a 28.9 31.9 5.0 26.0 10 150 157 42.1 sm8s28 31.1 38.0 5.0 28.0 10 150 132 50.1 sm8s28a 31.1 34.4 5.0 28.0 10 150 145 45.4 sm8s30 33.3 40.7 5.0 30.0 10 150 123 53.5 sm8s30a 33.3 36.8 5.0 30.0 10 150 136 48.4 sm8s33 36.7 44.9 5.0 33.0 10 150 112 59.0 sm8s33a 36.7 40.6 5.0 33.0 10 150 124 53.3 sm8s36 40.0 48.9 5.0 36.0 10 150 103 64.3 SM8S36A 40.0 44.2 5.0 36.0 10 150 114 58.1 sm8s40 44.4 54.3 5.0 40 10 150 92.4 71.4 sm8s40a 44.4 49.1 5.0 40 10 150 102 64.5 sm8s43 47.8 58.4 5.0 43 10 150 86 76.7 sm8s43a 47.8 52.8 5.0 43 10 150 95.1 69.4
document number: 88387 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 20-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 207 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sm8s10 thru sm8s43a vishay general semiconductor new product note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - power derating curve fig. 2 - load dump power characteristics (10 ms exponential waveform) fig. 3 - pulse waveform fig. 4 - reverse power capability thermal characteristics (t c = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to case r ? jc 0.90 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode sm8s10ahe3/2d (1) 2.605 2d 750 13" diameter plasti c tape and reel, anode towards the sprocket hole 0 2.0 4.0 6.0 8.0 0 50 100 150 200 power di ss ipation (w) ca s e temperature (c) 0 2000 1000 3000 4000 5000 6000 25 50 75 100 125 150 175 load dump power (w) ca s e temperature (c) 0 50 100 150 0 10 20 30 40 input peak pul s e current (%) t - time (m s ) t d t r = 10 s peak value i ppm half value - i ppm i pp 2 t j = 25 c pul s e width (t d ) i s dened a s the point where the peak current decay s to 50 % of i ppm rever s e s urge power (w) 1000 10 000 10 100 pul s e width (m s ) - ? i pp exponential waveform
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88387 208 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sm8s10 thru sm8s43a vishay general semiconductor new product fig. 5 - typical transient thermal impedance fig. 6 - typical junction capacitance package outline dimensions in inches (millimeters) t - pul s e width ( s ) 100 10 1 0.1 0.01 0.01 0.1 1 10 100 r jc r ja tran s ient thermal impedance (c/w) v wm - rever s e s tand-off voltage (v) 100 000 10 000 1000 10 c j - junction capacitance (pf) 40 35 30 25 20 15 45 mea s ured at s tand-off voltage v wm mea s ured at zero bia s t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p do-218ab mountin g pad layout 0.413 (10.5) 0.374 (9.5) 0.091 (2.3) 0.067 (1.7) 0.116 (3.0) 0.093 (2.4) 0.150 (3.8) 0.126 (3.2) 0.366 (9.3) 0.343 (8.7) 0.606 (15.4) 0.583 (14.8) 0.116 (3.0) 0.093 (2.4) 0.628 (16.0) 0.592 (15.0) 0.539 (13.7) 0.524 (13.3) 0.366 (9.3) 0.343 (8.7) 0.406 (10.3) 0.382 (9.7) 0.342 (8.7) 0.327 (8.3) 0.413 (10.5) 0.374 (9.5) 0.028 (0.7) 0.020 (0.5) 0.138 (3.5) 0.098 (2.5) lead 1 0.098 (2.5) 0.059 (1.5) lead 2/metal heat s ink 0.197 (5.0) 0.185 (4.7) 0.016 (0.4) min.
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